On May 9 at ChipEx2023, Israel's largest semiconductor event, Samsung Foundry introduced their latest technologies and solutions under the theme “Foundry All Around”. One of the key topics at the event was 3nm Gate-All-Around (GAA) Multi-Bridge-Channel Field Effect Transistor (MBCFET™) technology and the Static Random Access Memory (SRAM) design flexibility it provides, and this article will take a closer look at the groundbreaking technology.
As always, great work on presented materials. Thank you.
"plans to introduce it for mass production in 2022."
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On May 9 at ChipEx2023, Israel's largest semiconductor event, Samsung Foundry introduced their latest technologies and solutions under the theme “Foundry All Around”. One of the key topics at the event was 3nm Gate-All-Around (GAA) Multi-Bridge-Channel Field Effect Transistor (MBCFET™) technology and the Static Random Access Memory (SRAM) design flexibility it provides, and this article will take a closer look at the groundbreaking technology.